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器件的模型一直是模擬／射頻集成電路工程師關(guān)心的問題。是否能建立一個盡可能反映器件行為的模型關(guān)系到整個集成電路設(shè)計的成敗。本書內(nèi)容豐富，從主流模型的討論到小尺寸器件模型和量子效應(yīng)的介紹，從模型參數(shù)的提取方法到模型在硬件描述語言中的應(yīng)用等方面都作了詳細的論述。本書對設(shè)計工程師和器件工程師都有很好的參考價值。

Foreword
Hiroshi Iwai
Introduction
Wladek Grabinski, Bart Nauwelaers and Dominique Schreurs
1 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures
Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno
2 PSP: An advanced surface-potential-based MOSFET model
R. van Langevelde, and G. Gildenblat
3 EKV3.0: An advanced charge based MOS transistor model. A design-oriented MOS transistor compact model for next generation CMOS
Matthias Bucher, Antonios Bazigos, Francois Krummenacher,Jean-Micehl Sallese, and Christian Enz
4 Modelling using high-frequency measurements
Dominique Schreurs
5 Empirical FET models
Iltcho Angelov
6 Modeling the SOI MOSFET nonlinearities. An empirical approach
B. Parvais, A. Siligaris
7 Circuit level RF modeling and design
Nobuyuki Itoh
8 On incorporating parasitic quantum effects in classical circuit simulations
Frank Felgenhauer, Maik Begoin and Wolfgang Mathis
9 Compact modeling of the MOSFET in VHDL-AMS
Christophe Lallement, Francois Pecheux, Alain Vachoux and Fabien Pregaldiny
10 Compact modeling in Verilog-A
Boris Troyanovsky, Patrick O'Halloran and Marek Mierzwinski
Index